| 离子束增强沉积法制备二氧化铪薄膜 |
| |
| 引用本文： | 陶凯,俞跃辉,郑智宏,邹世昌.离子束增强沉积法制备二氧化铪薄膜[J].半导体技术,2006,31(3):209-211. |
| |
| 作者姓名： | 陶凯 俞跃辉 郑智宏 邹世昌 |
| |
| 作者单位： | 中国科学院上海微系统与信息技术研究所,上海,200050;上海宏力半导体制造有限公司,上海,201203;中国科学院研究生院,北京,100039;中国科学院上海微系统与信息技术研究所,上海,200050;中国科学院上海微系统与信息技术研究所,上海,200050;上海宏力半导体制造有限公司,上海,201203 |
| |
| 摘 要： | 利用离子束增强沉积(IBED)技术在硅衬底上沉积得到50nm的二氧化铪薄膜.卢瑟福背散射(RBS)的结果指出样品表面有过量氧元素存在.X射线光电子能谱(XPS)显示退火前后薄膜内部化学键没有变化.透射电子显微镜(TEM)表明界面处有非晶铪氧硅化合物生成.电子衍射(ED)显示所制备的二氧化铪薄膜呈现长程无序、区域有序的多晶态.实验为HfO2作为高k电介质在集成电路制造中的应用提供了一种简单有效的方法.
|
| 关 键 词： | 二氧化铪 离子束增强沉积 高k电介质 |
| 文章编号： | 1003-353(2006)03-0209-03 |
| 收稿时间： | 2005-07-04 |
| 修稿时间： | 2005年7月4日 |
Investigation of Hafnium Dioxide Film Synthesized by Ion Beam Enhanced Deposition |
| |
| TAO Kai,YU Yue-hui,ZHENG Zhi-hong,ZOU Shi-chang.Investigation of Hafnium Dioxide Film Synthesized by Ion Beam Enhanced Deposition[J].Semiconductor Technology,2006,31(3):209-211. |
| |
| Authors: | TAO Kai YU Yue-hui ZHENG Zhi-hong ZOU Shi-chang |
| |
| Affiliation: | 1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; 2. Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China; 3.Graduate School of Chinese Academy of Sciences, Beijing 100039, China |
| |
| Abstract: | Hafnium dioxide film with 50nm thickness were deposited on silicon substrates by IBED (ion beam enhanced deposition). RBS (Rutherford back scattering) results indicated there was redundant oxygen on the film surface. XPS showed the chain in the film has no change before or after annealing TEM (transmission electron microscopy) pictures showed that there was an amorphous layer at the interface and ED (electron diffraction) pointed out that the deposited films were polycrystalline. The experiment results provide a new and easy method to fabricate HfO2 thin films for VLSI applications. |
| |
| Keywords: | HfO2 IBED high-k dielectric |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
