| 不同应力下的InxGa1-xAs薄膜表面形貌 |
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| 引用本文： | 郭 祥,王 一,魏文喆,黄梦雅,赵 振,王继红,胡明哲,丁 召.不同应力下的InxGa1-xAs薄膜表面形貌[J].材料导报,2015,29(2):21-23,37. |
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| 作者姓名： | 郭 祥 王 一 魏文喆 黄梦雅 赵 振 王继红 胡明哲 丁 召 |
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| 作者单位： | 贵州大学贵州省微纳电子与软件技术重点实验室,贵阳,550025 |
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| 基金项目： | 国家自然科学基金(60866001);教育部博士点基金(20105201110003);贵州省自然科学基金(20132092;黔科合J字[2014]2046号) |
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| 摘 要： | 利用分子束外延技术,通过反射式高能电子衍射仪实时监控InGaAs薄膜生长状况,在InAs(001)基片上生长In0.86Ga0.14As,在GaAs(001)基片上生长In0.14Ga0.86As(厚度均为20原子层)单晶薄膜。采用扫描隧道显微镜对原位退火后的InGaAs样品进行扫描,发现不同组分的InGaAs呈现不同的表面形貌。虽然生长的初始表面都是原子级平坦,但是由于晶格常数差异触发不同类型的表面应力,促使In0.14Ga0.86As/GaAs薄膜中台阶边缘平滑扭曲,而在In0.86Ga0.14As/InAs薄膜表面台阶却呈锯齿状;同时,由于不同类型表面应力的作用,低In组分薄膜形成更多的二维(2D)岛。
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| 关 键 词： | MBE InGaAs 表面形貌 |
Study on the Surface Morphology of InGaAs Film Subjected to Varying Stresses |
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| GUO Xiang,WANG Yi,WEI Wenzhe,HUANG Mengy,ZHAO Zhen,WANG Jihong,HU Mingzhe and DING Zhao.Study on the Surface Morphology of InGaAs Film Subjected to Varying Stresses[J].Materials Review,2015,29(2):21-23,37. |
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| Authors: | GUO Xiang WANG Yi WEI Wenzhe HUANG Mengy ZHAO Zhen WANG Jihong HU Mingzhe and DING Zhao |
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| Affiliation: | GUO Xiang;WANG Yi;WEI Wenzhe;HUANG Mengya;ZHAO Zhen;WANG Jihong;HU Mingzhe;DING Zhao;Key Laboratory of Micro-Nano-Electronics and Software Technology of Guizhou Province,Guizhou University; |
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| Abstract: | The growth of InGaAs film is monitored by RHEED in a Omicron MBE system. In0.86Ga0.14As films with thickness of 20 ML are grown on InAs(001) substrates, and In0.14Ga0.86As films with thickness of 20 ML are grown on GaAs(001) substrates. In situ annealed InGaAs samples on different substrates are observed by scanning tunneling microscopy (STM),the results show that both of the substrates are atomically flat, however, the step edges of In0.14Ga0.86As/GaAs film become smooth and distorted, the jagged step edges of In0.86Ga0.14As/InAs become more obvious by the surfaces stress which formed by different lattice constant of the InGaAs films on different substrates, as the thickness increasing. With the effect of different surface stress, more 2D islands formed in In0.14Ga0.86As/GaAs film. |
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| Keywords: | MBE InGaAs surface morphology |
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