镉掺杂氧化亚铜薄膜的制备及其光电性能

采用一步水热法制备镉掺杂的Cu2O薄膜(Cd/Cu2O),分别探讨了制备过程中CuSO4浓度、NaOH浓度、反应时间、反应温度和CdSO4浓度对Cu2O和Cd/Cu2O薄膜光电性能的影响。结果表明,当反应釜中CuSO4浓度为0.114 2 mol/L、NaOH浓度为0.028 6 mol/L、反应时间为8 h、反应温度为90℃、CdSO4浓度分别为0 mol/L和0.571 4μmol/L时,可在基底Cu片上分别获得光电压为0.366 7 V的Cu2O样品和光电压为0.460 2 V的Cd/Cu2O薄膜样品。紫外可见吸收光谱(UV-Vis)、X射线衍射(XRD)图谱、扫描电子显微镜(SEM)和能谱仪(EDS)表征结果显示,Cu2O的禁带宽度为2.1 eV,而Cd/Cu2O的禁带宽度最小达到1.8 eV;Cd/Cu2O的择优生长面为(111)面,其衍射峰强度比Cu2O明显增强;Cd/Cu2O样品表面与Cu2O对比变得光滑,粒径由Cu2O的1.0~3.0μm减小到Cd/Cu2O的0.3~0.9μm。

Preparation and Photoelectric Properties of Cd Doped Cu2O Thin Films

Cu2O thin films were prepared by the one-step hydrothermal method.The effects of reaction conditions,such as the concentration of CuSO4(cCuSO4),concentration of NaOH(cNaOH),reaction time,reaction temperature and concentration of CdSO4 on the photoelectric properties of the Cu2O and Cd/Cu2O thin films were discussed.The results show that when the copper sheet is inserted into the reactor and placed in the oven at 90 ℃ for 8 h,cCuSO4 in the reactor is 0.114 2 mol/L,cNaOHis 0.028 6 mol/L,the concentration of CdSO4 is 0 mol/L or 0.571 4 μmol/L,the Cu2O thin films with the highest photovoltage of 0.366 7 V and the Cd/Cu2O thin films with the highest photovoltage of 0.460 2 V are obtained respectively.The characterization results of the Ultraviolet-visible spectroscopy(UV-Vis),X-ray diffraction(XRD) spectrum,energy dispersive spectrometer(EDS) and scanning electron microscope(SEM) indicate that the bandgap of Cu2O is 2.1 eV,while that of Cd/Cu2O is at least 1.8 eV.The preferred growth surface of Cd/Cu2O is(111) plane,and its diffraction peak intensity is obviously stronger than that of Cu2O.The surface of Cd/Cu2O sample is smoother than that of Cu2O,and the particle size is reduced from 1.0-3.0 μm for Cu2O to 0.3-0.9 μm for Cd/Cu2O.