Scintillation properties of Tm-doped Lu3Al5O12 single crystals |
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Authors: | Makoto Sugiyama Yutaka Fujimoto Takayuki Yanagida Daisuke Totsuka Yuui Yokota Akira Yoshikawa |
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Affiliation: | aInstitute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan;bNew Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan;cNihon Kessho Kogaku Co. Ltd, 810-5 Nobe-cho, Tatebayashi gunma, Japan |
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Abstract: | Using the micro-pulling-down (μ-PD) method, Tm-doped Lu3Al5O12 (Tm:LuAG) single crystals were grown to examine their scintillation properties. In transmittance spectra, they exhibited about 80% transparency in the wavelengths longer than 320 nm and five absorption lines due to Tm3+ 4f–4f transitions were observed. 241Am α-ray excited radioluminescence spectra were measured and intense 4f–4f emission peaks were observed with the host emission. When excited by 137Cs γ-Ray to obtain pulse height spectra, Tm 1% doped LuAG showed the highest light yield coupled with a photomultiplier (PMT) or a silicon avalanche photodiode (Si-APD). The light yield was estimated to be 5800 and 7300 photons/MeV for PMT and Si-APD, respectively. Decay time profiles consist of two exponential components and the fast and slow components are considered to be attributed to the host and the combination of the host and Tm3+ 4f–4f emission, respectively. |
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Keywords: | LuAG Scintillator Tm3+ 4f&ndash 4f Single crystal |
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