Electronic interaction between impurities in the oxide film and the semiconductor substrate

Electronic interactions between impurities incorporated into the oxide film on silicon (or other semiconductors) and the semiconductor substrate are postulated. The impurities are presumed to change the Fermi level in the oxide, thus causing charge transfer between the oxide and the semiconductor surface. The anodic behavior ofN-type silicon contacting an electrolyte as a function of impurities incorporated into the oxide is suggested as experimental verification of this concept.