Spectrometric properties of SiC detectors based on ion-implanted p +-n junctions

Results of spectrometric studies of nuclear radiation detectors based on p ⁺-n junctions formed in 4H-SiC films are presented for the first time. The junctions were fabricated by ion implantation of aluminum into 26-μm-thick CVD-grown epitaxial 4H-SiC layers with an uncompensated donor concentration of (3–5) × 10¹⁵ cm^?3. The detector characteristics were measured in testing with natural-decay alpha particles with energies of 3.35 and 5.4 MeV. The collection efficiency of charge generated by 3.35 MeV alpha particles was as high as 100% at an energy resolution of ? 2%.