Structural and optical properties of Ti-doped ZnO thin films prepared by the cathodic vacuum arc technique with different annealing processes |
| |
Authors: | Chun-Sen WuBor-Tsuen Lin Ru-Yuan Yang |
| |
Affiliation: | a Medical devices and Opto-electronics Equipment Department, Metal Industries Research and Development Center; Department of Mechanical and Automation Engineering, National Kaohsiung First University of Science and Technology, Taiwanb Department of Mechanical and Automation Engineering, National Kaohsiung First University of Science and Technology, Taiwanc Department of Materials Engineering, National Ping-Tung University of Science and Technology, Taiwan |
| |
Abstract: | Highly transparent Ti-doped ZnO thin films were prepared on glass substrates at a deposition rate of approximately 33 nm/min using the cathodic vacuum arc technique with a Zn target power of 550 W and a Ti target power of 750 W, respectively. X-ray diffraction measurements have shown that the Ti-doped ZnO thin film with a vacuum post-annealing condition is c-axis oriented but an amorphous phase at the other post-annealing atmosphere and as-deposited condition. Transmittance measurements show that the best optical quality of the Ti-doped ZnO thin films occurred at a post-annealing atmosphere of N2/H2 mixed gases. Additionally, the optical transmittance of all films has been found more than 85% in a range of 500-700 nm. The lowest electrical resistivity was 3.48 × 10−3 Ω cm, obtained on as-deposited films. However, the post-annealing condition greatly increased the resistivity. |
| |
Keywords: | TCO Zinc oxide Cathodic vacuum arc technique |
本文献已被 ScienceDirect 等数据库收录! |
|