Influence of carrier injection on resistive switching of CaCu3Ti4O12 thin films with Ni electrode期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Influence of carrier injection on resistive switching of CaCu₃Ti₄O₁₂ thin films with Ni electrode

Authors:	Li-Chun Chang Cheng-Huan YangHsuan-Ling Kao

Affiliation:	^a Department of Materials Engineering, Ming Chi University of Technology, Taipei, Taiwan ^b Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taiwan ^c Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan

Abstract:	The influence of electron injection on the electric-pulse-induced resistive switching of perovskite CaCu₃Ti₄O₁₂ (CCTO) films was studied by current-voltage (I-V) measurements. The electron injection was reduced by annealing the sample in an O₂ atmosphere. The switching from the high-resistance state HRS to the low-resistance state LRS by a filamentary mechanism was suppressed when the carrier injection occurs by Poole-Frenkel emission. The interfacial potential barrier plays a crucial role in determining the carrier injection.

Keywords:	Nonvolatile memory Thin film Perovskite Sputtering Nickel
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