Numerical analysis of a DAR IMPATT diode |
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| Authors: | Alexander M. Zemliak Santiago Cabrera |
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| Affiliation: | (1) Puebla Autonomous University, Av. San Claudio y 18 Sur, C.U., Puebla, 72570, Mexico |
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| Abstract: | The analysis and optimization of the n + pvnp + avalanche diode structure that includes two avalanche regions have been realized on basis of the nonlinear model and special optimization procedure. The admittance and energy characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz. Output power level was optimized for the second frequency band near the 220 GHz. |
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| Keywords: | Non-evident numerical scheme Semiconductor structure optimization DAR IMPATT diode |
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