Fabrication and enhanced field emission properties of novel silicon nanostructures |
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Authors: | Srikanth Ravipati Chang-Jung Kuo Jiann Shieh Cheng-Tung Chou Fu-Hsiang Ko |
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Affiliation: | a Institute of Nanotechnology and Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;b Department of Chemical & Materials Engineering, National Central University, Hsinchu 300, Taiwan;c National Nano Device Laboratories, Hsinchu 300, Taiwan |
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Abstract: | We reported the fabrication and the field emission properties of two-tier novel silicon nanostructures. First, silicon nanopillars with ordered high aspect ratio were achieved by using conventional lithographic techniques to act as the field emission sources. Second, sharp-edged well-aligned silicon nanograss was fabricated on top of the nanopillars by means of hydrogen plasma dry etching to induce the field emission characteristics. The turn-on fields were obtained as 10.5 and 14.4 V/μm under current density of 0.01 mA/cm2 for two-tier patterns separated by respective 5 μm and 2 μm spaces. The excellent field emission property from these novel nanostructures exhibited a great potential as high-performance field emitter arrays towards future nanoelectronic devices. |
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