Low Subthreshold Swing HfLaO/Pentacene Organic Thin-Film Transistors

We have integrated a high-kappa HfLaO dielectric into pentacene-based organic thin-film transistors. We measured good device performance, such as a low subthreshold swing of 0.078 V/dec, a threshold voltage of -1.3 V, and a field-effect mobility of 0.71cm²/ Vldrs . This occurred along with an ON-OFF state drive current ratio of 1.0 times 10⁵, when the devices were operated at only 2 V. The performance is due to the high gate-capacitance density of 950 nF/cm² that is given by the HfLaO dielectric, which is achieved at an equivalent oxide thickness of only 3.6 nm with a low leakage current of 5.1 times 10^-7 at 2 V.