Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors |
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Authors: | Takei Kuniharu Madsen Morten Fang Hui Kapadia Rehan Chuang Steven Kim Ha Sul Liu Chin-Hung Plis E Nah Junghyo Krishna Sanjay Chueh Yu-Lun Guo Jing Javey Ali |
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Affiliation: | Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA. |
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Abstract: | As of yet, III-V p-type field-effect transistors (p-FETs) on Si have not been reported, due partly to materials and processing challenges, presenting an important bottleneck in the development of complementary III-V electronics. Here, we report the first high-mobility III-V p-FET on Si, enabled by the epitaxial layer transfer of InGaSb heterostructures with nanoscale thicknesses. Importantly, the use of ultrathin (thickness, ~2.5 nm) InAs cladding layers results in drastic performance enhancements arising from (i) surface passivation of the InGaSb channel, (ii) mobility enhancement due to the confinement of holes in InGaSb, and (iii) low-resistance, dopant-free contacts due to the type III band alignment of the heterojunction. The fabricated p-FETs display a peak effective mobility of ~820 cm(2)/(V s) for holes with a subthreshold swing of ~130 mV/decade. The results present an important advance in the field of III-V electronics. |
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