| 添加V_2O_5对Mg_4Nb_2O_9微波介质陶瓷性能的影响 |
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| 引用本文： | 权微娟,刘敏,周洪庆.添加V_2O_5对Mg_4Nb_2O_9微波介质陶瓷性能的影响[J].电子元件与材料,2010,29(3). |
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| 作者姓名： | 权微娟 刘敏 周洪庆 |
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| 作者单位： | 南京工业大学,材料科学与工程学院,江苏,南京,210009 |
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| 基金项目： | 江苏省科技支撑计划资助项目(NoBE2009168) |
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| 摘 要： | 采用固相反应法制备了Mg4Nb2O9微波介质陶瓷,研究了添加V2O5对其烧结温度、微观结构和介电性能的影响。结果表明:当添加0.5%(质量分数)的V2O5时,Mg4Nb2O9陶瓷的烧结温度从1350℃降低到1150℃,烧结温度范围拓宽为1150～1300℃;在1150℃烧结5h后,其介电性能达到最佳:εr=11.86,Q·f=99828GHz(11.2GHz),τf=–57×10–6/℃(10～90℃,1MHz)。当w(V2O5)增大到1.5%时,Mg4Nb2O9陶瓷的介电性能变差。
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| 关 键 词： | 微波介质陶瓷 Mg4Nb2O9 V2O5 介电性能 |
Effects of V_2O_5 addition on the properties of Mg_4Nb_2O_9 microwave dielectric ceramics |
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| QUAN Weijuan,LIU Min,ZHOU Hongqing.Effects of V_2O_5 addition on the properties of Mg_4Nb_2O_9 microwave dielectric ceramics[J].Electronic Components & Materials,2010,29(3). |
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| Authors: | QUAN Weijuan LIU Min ZHOU Hongqing |
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| Affiliation: | College of Material Science and Engineering;Nanjing University of Technology;Nanjing 210009;China |
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| Abstract: | Mg_4Nb_2O_9 microwave dielectric ceramics were prepared via the solid-state reaction method. The effects of V_2O_v5 addition on the sintering temperature, microstructure and dielectric properties of Mg_4Nb_2O_9 microwave dielectric ceramics were studied. The results show that, when 0.5% (mass fraction) V_2O_5 is introduced, the sintering temperature of Mg_4Nb_2O_9 microwave dielectric ceramics is decreased from 1 350 ℃ to 1 150 ℃, while the sintering temperature range is widened to 1 150~1 300 ℃; After sintering for 5 h at 1 150 ℃, optimal dielectric properties are obtained: ε_r = 11.86, Q·f = 99 828 GHz (11.2 GHz), τ_f = - 57×10_~(-6)/℃ (10~90 ℃, 1 MHz). However, the dielectric properties of Mg_4Nb_2O_9 microwave dielectric ceramics become worse when 1.5% (mass fraction) V_2O_5 is added. |
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| Keywords: | microwave dielectric ceramic Mg4Nb2O9 V2O5 dielectric property |
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