| 基于漏区边界曲率分析的射频RESURF LDMOS耐压与导通电阻优化 |
| |
| 引用本文： | 池雅庆,郝跃,冯辉,方粮.基于漏区边界曲率分析的射频RESURF LDMOS耐压与导通电阻优化[J].半导体学报,2006,27(10):1818-1822. |
| |
| 作者姓名： | 池雅庆 郝跃 冯辉 方粮 |
| |
| 作者单位： | [1]国防科技大学计算机学院微电子研究所,长沙410073 [2]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,西安710071 |
| |
| 摘 要： | 分析了漏区边界曲率半径与射频RESURF LDMOS击穿电压的关系,指出漏区边界的弯曲对RESURF技术的效果具有强化作用.理论分析与模拟结果表明,满足RESURF条件时,提高漂移区掺杂浓度或掺杂深度的同时相应减小漏区边界的曲率半径,可以在维持击穿电压不变的前提下,明显降低导通电阻.
|
| 关 键 词： | LDMOS RESURF 漏区边界曲率半径 击穿电压 导通电阻 漏区 边界 曲率分析 射频 LDMOS RESURF 耐压 导通电阻 优化 Region Drain Curvature Boundary Analysis Based Breakdown Voltage 前提 时相 深度 掺杂浓度 |
| 文章编号： | 0253-4177(2006)10-1818-05 |
| 收稿时间： | 4/7/2006 7:38:07 PM |
| 修稿时间： | 5/29/2006 8:31:10 PM |
Optimization of Breakdown Voltage and On-Resistance Based on the Analysis of the Boundary Curvature of the Drain Region in RF RESURF LDMOS |
| |
| Chi Yaqing,Hao Yue,Feng Hui and Fang Liang.Optimization of Breakdown Voltage and On-Resistance Based on the Analysis of the Boundary Curvature of the Drain Region in RF RESURF LDMOS[J].Chinese Journal of Semiconductors,2006,27(10):1818-1822. |
| |
| Authors: | Chi Yaqing Hao Yue Feng Hui and Fang Liang |
| |
| Abstract: | This paper analyzes the relation between the boundary curvature radius of the drain region and the breakdown voltage of RF RESURF LDMOS.The bending of the curve in the RESURF technology can increase the breakdown voltage greatly.Analysis and simulation prove that the high breakdown voltage and much lower on-resistance in the same device profile can be maintained by an impurity dose or by increasing the thickness of the drift region and reducing boundary curvature radius of the drain region under the REUSRF principle. |
| |
| Keywords: | LDMOS RESURF boundary curvature radius of drain region breakdown voltage on-resistance |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
