Pressureless Sintering of SiC |
| |
| Authors: | Mamoru Omori Humihiko Takei |
| |
| Affiliation: | The Research Institute for Iron, Steel and Other Metals, Tohoku University, Sendai 980, Japan |
| |
| Abstract: | Pressureless sintering of SiC was accomplished at 2100°C with oxide additives. These additives were the products of the reaction of Al(OH)3 with HCl and of Y(OH)3 with HCOOH. These reaction products were dissolved in water and mixed with submicrometer β-SiC. A mixture of equal weights of these additives was effective for the sintering of SiC. |
| |
| Keywords: | |
|
|
