Electrical properties of low-temperature pyrolytic SiO2on InP |
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| Authors: | Bennett BR Lorenzo JP Vaccaro K |
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| Affiliation: | Rome Air Dev. Center, Hanscom Air Force Base, Bedford, MA; |
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| Abstract: | The first application of a new technique (SiH4+O2 at 83-330°C and 2-12 torr) for deposition of SiO2 on InP is reported. SiO2 deposited at 150-330°C has breakdown strength of 8-10 MV/cm, resistivity >1015 Ωcm, and refractive index of 1.45-1.46 comparable to thermal SiO 2 grown at 1100°C. C/V measurements on Al/SiO2/InP MIS structures suggest that very low temperature oxides (90-100°C) have the best interfacial properties |
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