RF model of flexible microwave single-crystalline silicon nanomembrane PIN diodes on plastic substrate |
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Authors: | Guoxuan Qin Hao-Chih Yuan Weidong Zhou Zhenqiang Ma |
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Affiliation: | a Tianjin University, School of Electronic Information Engineering, Tianjin 300072, PR China b University of Wisconsin-Madison, Department of Electrical and Computer Engineering, Madison, WI 53706, USA c Soitec USA, 2 Centennial Drive, Peabody, MA 01960, USA d University of Texas at Arlington, Department of Electrical Engineering, Arlington, TX 76019, USA |
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Abstract: | This paper reports the realization and RF modeling of flexible microwave P-type-Intrinsic-N-type (PIN) diodes using transferrable single-crystalline Si nanomembranes (SiNMs) that are monolithically integrated on low-cost, flexible plastic substrates. With high-energy, high-dose ion implantation and high-temperature annealing before nanomembrane release and transfer process, the parasitic parameters (i.e. resistance, inductance, etc.) are effectively reduced, and the flexible PIN diodes achieve good high-frequency response. With consideration of the flexible device fabrication, structure and layout configuration, a RF model of the microwave single-crystalline Si nanomembrane PIN diodes on plastic substrate is presented. The RF/microwave equivalent circuit model achieves good agreement with the experimental results of the single-crystalline SiNM PIN diodes with different diode areas, and reveals the most influential factors to flexible diode characteristics. The study provides guidelines for properly designing and using single-crystalline SiNMs for flexible RF/microwave diodes and demonstrates the great possibility of flexible monolithic microwave integrated systems. |
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Keywords: | Flexible PIN diode Microwave Modeling Nanomembrane Plastic substrate Radio frequency (RF) Single-crystalline silicon |
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