a Ampère, UMR CNRS 5005, Université de Lyon, Ecole Centrale de Lyon, 36 Av. Guy de Collongues, F-69134 Ecully, France b Institut de Nanotechnologies de Lyon (INL), UMR CNRS 5270, Université de Lyon, INSA Lyon, F-69621 Villeurbanne, France
Abstract:
A wideband Low Power Single Pole 6-Throw (SP6T) antenna switch has been designed for GSM/DCS/802.11b mobile standards using a newly improved architecture and fabricated using a pseudomorphic depletion mode 0.18 μm HEMT GaAs process. The switch exhibits less than 1 dB insertion loss and isolation performances from up to 53 dB at 0.8 GHz down to 42 dB at 2.5 GHz. The circuit DC power consumption is less than 500 μW in full power transmission condition and makes it suitable for use in mobile terminals like mobile phones or PDAs. The paper presents simulation results validated by experimental measurements on an IC prototype.