The novel SCR-based ESD protection with low triggering and high holding voltages |
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Authors: | Myounggon Kang Ki-Whan Song Hyungcheol Shin |
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Affiliation: | a Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea b Memory Division, Samsung Electronics Co., Ltd., San 16, Banwol-Dong, Hwasung-City, Gyeonggi-Do 445-701, Republic of Korea |
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Abstract: | This paper introduces a novel silicon controlled rectifier (SCR)-based circuit. The proposed device using 70 nm DRAM process obtained the high holding and low triggering voltages by using variable IR drop. These characteristics enable to discharge electrostatic discharge (ESD) current and ensure latch-up immunity for normal operations. Also, the proposed scheme is easily implemented through the modification of the metal connection compare to the conventional SCR-based device. We investigated electrical characteristics by both measurements and TCAD simulations. Measurement results showed the proposed SCR had triggering voltage of 6.2 V, holding voltage of 3.3 V, and the second breakdown current of 58 mA/μm. |
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Keywords: | Discharge electrostatic discharge (ESD) Silicon controlled rectifier (SCR) Holding voltage Triggering voltage Breakdown current |
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