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A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection |
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| Authors: | Chenyue Ma Lining Zhang Xiufang Zhang Xing Zhang |
| Affiliation: | a TSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China b The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China c Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, W303, West Tower, IER Bldg., Hi-Tech Industrial Park South, Shenzhen 518057, China |
| Abstract: | A physical based model for predicting the performance degradation of the FinFET is developed accounting for the interface state distribution effect due to hot carrier injection (HCI). The non-uniform distribution of interface state along the FinFET channel is first extracted by a forward gated-diode method and then reproduced by an empirical model. From this, a physical-based device model, which accounts for the interface state distribution effect, is developed to predict the performance degradation of FinFET. The result shows that the developed model not only matches well with the experimental data of FinFET in all operation regions, but also predicts the asymmetric degradation of saturation drain current in forward and reverse operation mode. Finally, the impact of HCI to a 6-T SRAM cell is simulated using HSPICE. |
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