| 蓝宝石衬底上AlGaN/GaN HEMT自热效应研究 |
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| 引用本文： | 杨燕,郝跃.蓝宝石衬底上AlGaN/GaN HEMT自热效应研究[J].固体电子学研究与进展,2005,25(3). |
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| 作者姓名： | 杨燕 郝跃 |
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| 作者单位： | 西安电子科技大学 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家预研基金 |
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| 摘 要： | 建立了包含“自热效应”的A lG aN/G aN HEM T(高电子迁移率晶体管)直流I-V特性解析模型。从理论的角度分析了自热效应对A lG aN/G aN HEM T器件的影响,并同已有的实验结果进行了对比,符合较好。证明基于这种模型的理论分析适于A lG aN/G aN HEM T器件测试及应用的实际情况。
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| 关 键 词： | 氮镓铝/氮化镓 高电子迁移率晶体管 自热效应 |
Study of Self-heating on AlGaN/GaN HEMTs Grown on Sapphire Substrate |
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| YANG Yan,HAO Yue.Study of Self-heating on AlGaN/GaN HEMTs Grown on Sapphire Substrate[J].Research & Progress of Solid State Electronics,2005,25(3). |
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| Authors: | YANG Yan HAO Yue |
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| Abstract: | An physical-based analytical model for the dc I-V characteristics of AlGaN/GaN high electron mobility transistors(HEMTs) is presented.The impact of self-heating effect on AlGaN/GaN HEMTs grown on sapphire substrate is analyzed in detail.The comparison between simulations and physical measurements shows a good agreement,therefore the theory analysis based on the model is suitable for the real actions of AlGaN/GaN HEMTs. |
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| Keywords: | AlGaN/GaN high electron mobility transistor self-heating |
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