High-temperature, high-voltage operation of pulse-doped diamondMESFET |
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Authors: | Vescan A Gluche P Ebert W Kohn E |
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Affiliation: | Dept. of Electron. Devices & Circuits, Ulm Univ.; |
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Abstract: | The fabrication and operation of a pulse-doped diamond metal-semiconductor field-effect transistor (MESFET) is presented showing a usable source drain voltage of 70 V and no breakdown up to 100 V at 350°C operating temperature. A channel sheet concentration of 8.5×1012 cm-2 could be fully modulated leading to a maximum transconductance of 0.22 mS/mm, although full activation of the boron acceptor had not been reached. For an optimized device structure, with reduced gate length below 0.25 μm and full activation, more than 10 W/mm RF-power density can be predicted |
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