一种中电压大功率IGBT模块行为模型

目前已有场终止型绝缘栅双极性晶体管(IGBT)行为模型以及仿真软件中的IGBT模型未专门针对中电压大功率IGBT模块搭建,不能准确模拟其区别于中小功率IGBT的行为特性。在已有行为模型基础上,提出引入IGBT基区存储电荷造成的等效电容及模块封装键合丝带来的寄生电感,考虑反并联PIN二极管行为模型,从而有针对性地实现了完整中电压大功率IGBT模块行为模型。同时提出了新的米勒电容函数拟合方法,量化分析行为模型完整开关过程中典型行为与模型参数的关系,通过较简便的方法实现了模型参数的提取。最后在Pspice环境下实现了一种3.3k V/1.5k A等级IGBT行为模型,并通过在Buck电路下仿真与实验波形对比证明了该行为模型的可行性和有效性。

The Medium-Voltage High Power IGBT Module Behavior Model

The existing models of trench stop insulated gate bipolar transistor (IGBT) behavior as well as the models in simulation software are not established specially for medium-voltage high power IGBT modules. As a result, these models fail to simulate the distinguished dynamic characteristics of high power IGBT accurately. This paper introduces an equivalent capacitance caused by charge stored in base area and a parasitic inductance in IGBT bond wire to the behavior models. Furthermore, combined with the freewheeling diode behavior model and the IGBT model, the integrated behavior model is established special for medium-voltage high power IGBT modules. At the same time, a new function fitting method for miller capacitance is proposed. The relationship between the typical behavior characteristics and the model parameters in integrated IGBT hard switching transient is quantitatively analyzed. The parameter extraction is realized by a concise way. Finally, a 3.3kV/1.5kA level IGBT behavior model is realized in Pspice simulation environment. The comparisons of simulation and experiment result prove the feasibility and validity of the model.