| 太阳电池用掺氮直拉单晶硅中氧沉淀行为的研究 |
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| 引用本文： | 李勇,钟尧,席珍强,杨德仁,阙端麟. 太阳电池用掺氮直拉单晶硅中氧沉淀行为的研究[J]. 材料科学与工程学报, 2006, 24(5): 676-678 |
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| 作者姓名： | 李勇 钟尧 席珍强 杨德仁 阙端麟 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,浙江,杭州,310027;中国空间技术研究院北京控制工程研究所,北京,100080 |
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| 基金项目： | 国家自然科学基金 , 教育部留学回国人员科研启动基金 |
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| 摘 要： | 利用傅立叶红外光谱仪研究了掺氮直拉单晶硅(NCZ)和普通直拉单晶硅(CZ)的原生氧沉淀以及模拟太阳电池制备热处理工艺下的氧沉淀行为.结果发现,掺氮直拉单晶硅的原生氧沉淀浓度比普通直拉单晶硅的略高,这是因为氮在晶体生长过程中可以促进氧沉淀.但是在模拟太阳电池制备热处理工艺中掺氮直拉单晶硅和普通直拉单晶硅一样,没有氧沉淀产生.这表明在太阳电池的短时间热处理工艺中,氮不会对氧沉淀产生影响,不会影响磷吸杂的效果.
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| 关 键 词： | 直拉单晶硅 氮 氧沉淀 |
| 文章编号： | 1673-2812(2006)05-0676-03 |
| 修稿时间： | 2005-11-01 |
Investigation of Oxygen Precipitation Behavior in Nitrogen-doped Czochralski Silicon Used for Solar Cells |
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| LI Yong,ZHONG Yao,XI Zhen-qiang,YANG De-ren,QUE Duan-lin. Investigation of Oxygen Precipitation Behavior in Nitrogen-doped Czochralski Silicon Used for Solar Cells[J]. Journal of Materials Science and Engineering, 2006, 24(5): 676-678 |
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| Authors: | LI Yong ZHONG Yao XI Zhen-qiang YANG De-ren QUE Duan-lin |
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| Abstract: | The behavior of oxygen precipitates in NCZ silicon during the simulated solar cell thermal process was studied by Fourier Transformation Infrared Ray(FTIR).It was found that the concentration of as grown oxygen precipitates in NCZ silicon was slightly higher than that of CZ silicon,which suggested that nitrogen could enhance oxygen precipitation during the crystal growth.However, no oxygen precipitates were generated both in NCZ silicon and CZ silicon during the simulated solar cell thermal process,indicating that nitrogen would not affect oxygen precipitates in the short-time process. |
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| Keywords: | Czochralski silicon nitrogen oxygen precipitate |
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