Thermal stability of sputter-deposited ZnO thin films |
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Authors: | Y Song E S Kim A Kapila |
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Affiliation: | (1) Department of Electrical Engineering, University of Hawaii at Manoa, 96822 Honolulu, HI |
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Abstract: | This paper describes our investigation on the thermal stability of sputterdeposited, piezoelectric, ZnO thin films, using
x-ray photoelectron spectroscopy (XPS), capacitance-voltage (C-V) measurements of metal-insulator-semiconductor structures,
and electron microprobe. We focus on out-diffusion of Zn from ZnO thin films at a high temperature (450°C) and the composition
change of zinc and oxygen after high temperature annealing (up to 700°C), since these factors are related to reliability and
integrated circuits-process-compatibility of the ZnO films which are being used increasingly more in microtransducers and
acoustic devices. Our experiments with electron microprobe show that ZnO thin films sputter-deposited from a ZnO target in
a reactive environment (i.e., with O2) are thermally stable (up to 700°C). Additionally, the out-diffusion of zinc atoms from the ZnO films at a high temperature
(450°C) is verified to be negligible using the XPS and C-V measurement techniques. The usage of a compound ZnO target, reactive
environment with O2 and optimized deposition parameters (including gas ratio and pressure, substrate temperature, target-substrate distance and
rf power, etc.) is critical to deposit thermally stable, high quality ZnO films. |
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Keywords: | Piezoelectric thin films thermal stability |
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