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1.7MeV电子束在VO2热致相变薄膜中引起的结构和光电性能的变化
引用本文:卢勇,林理彬,卢铁城,何捷,邹萍. 1.7MeV电子束在VO2热致相变薄膜中引起的结构和光电性能的变化[J]. 功能材料, 2001, 32(5): 525-528
作者姓名:卢勇  林理彬  卢铁城  何捷  邹萍
作者单位:1. 四川大学物理系,
2. 四川大学分析测试中心,
摘    要:利用能量为1.7MeV,注量分别为10^13-10^15/cm^2的电子辐照VO2薄膜,采用XPS,XRD等测试手段对电子辐射前后的样品进行分析,并采用光透射性能和电光性能测试研究了电子辐照对样品相变过程中光电性能的影响,结果表明电子辐照在VO2薄膜中出现变价效应,产生新的X射线衍射峰,带来薄膜化学成分的变化,电子辐照在样品中产生的这些变化对VO2的热致相变特性有明显影响。

关 键 词:结构 相变性能 电子辐照 热致相变 二氧化钡薄膜
文章编号:1001-9731(2001)05-0525-04
修稿时间:2000-05-19

Change of structural, optical and electrical properties in VO2 thin films induced by electron irradiation with energy of 1.7MeV
LU Yong ,LIN Li bin ,ZOU Ping ,LU Tie cheng ,HE Jie. Change of structural, optical and electrical properties in VO2 thin films induced by electron irradiation with energy of 1.7MeV[J]. Journal of Functional Materials, 2001, 32(5): 525-528
Authors:LU Yong   LIN Li bin   ZOU Ping   LU Tie cheng   HE Jie
Affiliation:LU Yong 1,LIN Li bin 1,ZOU Ping 2,LU Tie cheng 1,HE Jie 1
Abstract:VO 2 thin films have been irradiated by electron beam with flux from 10 13 /cm 2 to 10 15 /cm 2 and energy of 1.7MeV. Structure and valence of before and after irradiation samples have been studied by X ray diffraction and X ray photoelectron spectroscopy. And phase transition properties of samples have been characterized by optical and electrical analysis methods. The results show that the phenomena of valence variation of V ion, the new peak of XRD and the change of component have been presented in irradiated samples. The electrical and optical properties during phase transition process have been affected by electron irradiation.
Keywords:VO 2 thin film  structure  phase transition properties  electron irradiation
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