| 35V高压CMOS集成电路的设计 |
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| 引用本文： | 王勇,严淼,马晓慧.35V高压CMOS集成电路的设计[J].微电子技术,1999(5). |
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| 作者姓名： | 王勇 严淼 马晓慧 |
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| 作者单位： | 中国华晶电子集团公司MOS设计所!无锡，214061 |
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| 摘 要： | 随着高压电路的广泛应用，高低压兼容电路的设计变得越来越重要。本文以VFD电路高压输出级部分的设计为例，对高压CMOS电路的设计，从工作原理、结构设计等多方面进行阐述。
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| 关 键 词： | 高低压兼容 开漏结构 常规工艺 |
Design of 35V HV CMOS IC |
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| Wang Yong, Yan Miao, Ma Xiaohui.Design of 35V HV CMOS IC[J].Microelectronic Technology,1999(5). |
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| Authors: | Wang Yong Yan Miao Ma Xiaohui |
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| Abstract: | With the extensive use of the HV IC, the design of HLV compatible integrated circuits have become more and more important. As a example of the design of the VFD circuit'sHV part, this paper introduces a design method of HV CMOS IC in several aspects, such asworking theory. structuer designing, etc. |
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| Keywords: | HLV compatible IC Floating drain Common process |
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