Tungsten–carbon films prepared by reactive sputtering from argon–benzene discharges

Tungsten–carbon thin films have been deposited by reactive (Ar+C₆H₆) DC magnetron sputtering onto various substrates. Deposition onto glass, monocrystalline silicon, tantalum and stainless steel at room temperature yielded W–C films, having XRD patterns corresponding to the structure of heavily disordered W₂C or WC_1?x carbides. The samples deposited upon the Au or Cu foils were nanocrystalline cubic WC_1?x with the grain size of 2.9 nm. Disordered tungsten–carbon films were stable up to 1200°C. Microhardness of the films with disordered W₂C phase was about 5–6 GPa while that of the films with disordered WC_1?x phase was about 17 GPa. The characteristics of films can be understood considering the effects of the incorporation of free carbon and/or carbon–hydrogen fragments into the tungsten carbide layer.