HgCdTe on Si: Present status and novel buffer layer concepts |
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| Authors: | T D Golding O W Holland M J Kim J H Dinan L A Almeida J M Arias J Bajaj H D Shih W P Kirk |
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| Affiliation: | (1) Department of Physics and Materials Science, University of North Texas, 76203 Denton, TX;(2) NVESD, 22060 Ft. Belvoir, VA;(3) Rockwell Scientific Company, 93012 Camarillo, CA;(4) DRS Infrared Technologies, 75374 Dallas, TX;(5) Department of Electrical Engineering, University of Texas at Arlington, 76019 Arlington, TX |
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| Abstract: | We discuss buffer-layer concepts for the synthesis of low defect-density HgCdTe epilayers on Si for both hybrid and monolithically
integrated, infrared focal-plane arrays (IRFPAa). The primary technical problems to overcome include the 19% lattice-parameter
mismatch between HgCdTe and Si, and the (211)B surface orientation required for molecular-beam epitaxy (MBE), the growth technique
of choice for HgCdTe. We provide a general overview of IRFPAs, motivations for realizing HgCdTe on Si, the current state-of-the-art
parameters as a baseline, and three novel buffer-layer concepts and technologies based on (1) obedient GeSi films on SiO2, (2) wafer bonding, and (3) chalcogenides. |
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| Keywords: | HgCdTE Si buffer layers wafer bonding |
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