| 光刻技术及其新进展 |
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| 引用本文： | 刘晓莉,李霄燕,邵敏权.光刻技术及其新进展[J].光机电信息,2005(9):12-15. |
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| 作者姓名： | 刘晓莉 李霄燕 邵敏权 |
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| 作者单位： | 长春工业大学电气与电子工程学院,吉林,长春,130021 |
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| 摘 要： | 介绍了用于制作半导体集成电路的光刻工艺的概念、分类及发展过程，阐述了当前光刻工艺的主流，并重点介绍了极紫外光刻、X射线光刻、电子束光刻、离子束光刻、纳米图形转印等下一代光刻技术的特点及其面临的挑战。
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| 关 键 词： | 光刻 集成电路 线宽 |
Recent Progress in Photolithography Technology |
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| LIU Xiao-Li,LI Xiao-yan,SHAO Min-quan.Recent Progress in Photolithography Technology[J].OME Information,2005(9):12-15. |
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| Authors: | LIU Xiao-Li LI Xiao-yan SHAO Min-quan |
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| Abstract: | Definition,classification and developing process of photolithography used in semiconductor integrated circuit are introduced. The characteristics and technology challenge of EUVL,XRL, EBL, IBL and NIL photo process for next generation photolithography are also discussed. |
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| Keywords: | photolithography integrated circuit linewidth |
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