Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots |
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| Authors: | Blokhin S.A. Maleev N.A. Kuzmenkov A.G. Sakharov A.V. Kulagina M.M. Shernyakov Y.M. Novikov I.I. Maximov M.V. Ustinov V.M. Kovsh A.R. Mikhrin S.S. Ledentsov N.N. Lin G. Chi J.Y. |
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| Affiliation: | A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia; |
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| Abstract: | Molecular beam epitaxy-grown 0.98-/spl mu/m vertical-cavity surface-emitting lasers (VCSELs) with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active region and fully doped Al/sub x/Ga/sub 1-x/As-GaAs DBRs was studied. Large-aperture VCSELs demonstrated internal optical losses less than 0.1% per one pass. Single-mode operation throughout the whole current range was observed for SML QD VCSELs with the tapered oxide apertures diameter less than 2 /spl mu/m. Devices with 3-/spl mu/m tapered-aperture showed high single-mode output power of 4 mW and external quantum efficiency of 68% at room temperature. |
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