| 气离溅射离子镀制氮化钛 |
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| 引用本文： | 董骐,罗蓉平,张守忠,杜建,钟钢,田凯,文学春,刘祥武.气离溅射离子镀制氮化钛[J].真空科学与技术学报,2005,25(1):69-74. |
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| 作者姓名： | 董骐 罗蓉平 张守忠 杜建 钟钢 田凯 文学春 刘祥武 |
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| 作者单位： | 北京丹普表面技术有限公司,北京,100096 |
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| 摘 要： | 本文详细介绍了气体离子源增强磁控溅射(气离溅射)反应离子镀膜技术和系统配置.特别是首次提出空分气离溅射的新概念,实现了磁控溅射金属镀膜过程和气体离子轰击化学反应过程在真空室内空间上的分离,从而保证空分气离溅射反应离子镀膜过程的长时间稳定性、重复性和一致性.当磁控溅射源采用中频电源驱动、最新开发的气体离子源采用脉冲直流电源后,实现了最佳的设备组合,可镀制出高品质的TiN膜层.
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| 关 键 词： | 气离溅射 离子源 阳极层流 溅射 氮化钛 离子镀膜 中频 脉冲直流 |
| 文章编号： | 1672-7126(2005)01-0069-06 |
| 修稿时间： | 2004年11月20 |
Growth of TiN Film by Modified Ion Beam Enhanced Magnetron Sputtering |
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| Dong Qi,Luo Rongping,Zhang Shouzhong,Du Jian,ZHONG Gang,TIAN Kai,Wen Xuechun,Liu Xiangwu.Growth of TiN Film by Modified Ion Beam Enhanced Magnetron Sputtering[J].JOurnal of Vacuum Science and Technology,2005,25(1):69-74. |
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| Authors: | Dong Qi Luo Rongping Zhang Shouzhong Du Jian ZHONG Gang TIAN Kai Wen Xuechun Liu Xiangwu |
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| Abstract: | A novel type of gaseous ion source,driven by a dedicated pulsed DC power supply,has been successfully developed and used in growing titanium nitride films by the modified ion beam enhanced magnetron sputtering technique,in which metal sputtering deposition and reactive ion beam bombardment and reaction are performed separately.The strengths of the newly modified technique include easy operation,long-time stability,good repetition,consistency and growth of high quality film. |
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| Keywords: | GlMS Ion source Anode layer Sputtering TiN Ion plating Medium frequency Pulsed DC |
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