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磁约束反应离子蚀刻装置的磁场优化
引用本文:敬小成,姚若河,林玉树.磁约束反应离子蚀刻装置的磁场优化[J].半导体学报,2006,27(13):422-425.
作者姓名:敬小成  姚若河  林玉树
作者单位:华南理工大学物理科学与技术学院,广州 510640;华南理工大学物理科学与技术学院,广州 510640;华南理工大学物理科学与技术学院,广州 510640
摘    要:应用有限元分析方法建立了多磁极约束磁增强型反应离子蚀刻装置内部的磁场分布模型. 通过研究磁极的配置及磁化方向的调整,对蚀刻装置内部磁场的强度及其分布的均匀性进行了优化研究,获得了在兼顾蚀刻速率和蚀刻均匀性的最优工艺要求.

关 键 词:反应离子蚀刻  磁约束  等离子体装置

Magnetic Field Optimization of a Reactive Ion Etching Device with Magnetic Containment
Jing Xiaocheng,Yao Ruohe and Lin Yushu.Magnetic Field Optimization of a Reactive Ion Etching Device with Magnetic Containment[J].Chinese Journal of Semiconductors,2006,27(13):422-425.
Authors:Jing Xiaocheng  Yao Ruohe and Lin Yushu
Affiliation:School of Physics,South China University of Technology,Guangzhou 510640,China;School of Physics,South China University of Technology,Guangzhou 510640,China;School of Physics,South China University of Technology,Guangzhou 510640,China
Abstract:The FEM (finite element mothod) is used for building the magnetic field model in the MERIE (magnetically enhanced reactive ion etcher) apparatus. Investigation reveals that the value and distribution of the magnetic field can be optimized using proper configuration of the magnetic poles and adjust of the magnetization direction,then the best process can be achieved by improving dry etching uniformity as well as the etching rate.
Keywords:reactive ion etching  magnetic containment  plasma reactor
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