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用改进算法提取GaN HEMT小信号等效电路模型
引用本文:朱磊,尤焕成,金香菊. 用改进算法提取GaN HEMT小信号等效电路模型[J]. 微纳电子技术, 2007, 44(3): 120-124
作者姓名:朱磊  尤焕成  金香菊
作者单位:电子科技大学,微电子与固体电子学院,成都,610054
摘    要:基于GaNHEMT小信号等效电路模型参数的提取,针对扰动机制、退火方式、记忆功能、回火机制等关键点,提出了一种改进的模拟退火算法。用Matlab仿真工具实验证明,在5~15GHz之间基于S参数测试数据,选取16个频率参考点,利用改进算法返回等效电路的13个参数,与测试数据有良好的一致性,是一种快速的全局优化算法。

关 键 词:GaN HEMT  小信号等效电路模型  模拟退火算法  参数提取  Matlab
文章编号:1671-4776(2007)03-0120-05
修稿时间:2006-10-31

Extraction of GaN HEMT Small Signal Equivalent Circuit Model Using an Improved Algorithm
ZHU Lei,YOU Huan-cheng,JIN Xiang-ju. Extraction of GaN HEMT Small Signal Equivalent Circuit Model Using an Improved Algorithm[J]. Micronanoelectronic Technology, 2007, 44(3): 120-124
Authors:ZHU Lei  YOU Huan-cheng  JIN Xiang-ju
Abstract:An improved fast simulated annealing method was presented,which improved the disturbing mechanism,annealing method,memory function,backfire mechanism. The method presented here was successfully applied to the extraction of the parameters of a GaN HEMT small signal equivalent circuit model by Matlab simulation tool. The experiment shows that the 13 parameters of equivalent circuit model are rapidly extrated with 16 test data between the frequency of 5 GHz and 15 GHz,which are quite close to the test results. It's proved that the method is a fast global optimization.
Keywords:GaN HEMT  Matlab
本文献已被 CNKI 维普 万方数据 等数据库收录!
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