| 三代微光像增强器制管工艺对阴极光电发射性能的影响 |
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| 引用本文： | 徐江涛.三代微光像增强器制管工艺对阴极光电发射性能的影响[J].真空电子技术,2004(5):63-65. |
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| 作者姓名： | 徐江涛 |
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| 作者单位： | 西安应用光学研究所,陕西,西安,710100 |
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| 摘 要： | 针对三代微光像增强器阴极激活灵敏度低的问题,运用分析仪器对组件进入激活系统前后的过程质量进行在线追综监测,分清了工艺质量对制备阴极灵敏度的影响,经改进工艺,试制出性能合格的三代微光像增强器.
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| 关 键 词： | 微光增强器 阴极光电发射 激活灵敏度 在线检测 |
| 文章编号： | 1002-8935(2004)05-0063-04 |
| 修稿时间： | 2004年3月1日 |
The Effect of Manufacturing Technology of the Third Generation Low-Light-Level Image Intensifier on the Cathode Photoemission Performances |
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| XU,Jiang-tao.The Effect of Manufacturing Technology of the Third Generation Low-Light-Level Image Intensifier on the Cathode Photoemission Performances[J].Vacuum Electronics,2004(5):63-65. |
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| Authors: | XU Jiang-tao |
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| Abstract: | In order to find a solution to the lower activation sensitivity problems of the third generation low-light-level image intensifier, we used analyzing instrument to carry out on-line quality detection for the assembly put into vacuum system. The effect of manufacturing technology on the activation sensitivity of the cathode photoemission was analyzed. Through the improvement of manufacturing technology, a qualified third generation low-light-level image intensifier can be obtained. |
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| Keywords: | GaAs |
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