Department of Electrical Engineering, College of Engineering, Rutgers University, P.O. Box 909, Piscataway, NJ 08854, U.S.A.
Abstract:
Passivation of GaAs surfaces was achieved by the deposition of Ge3N4 dielectric films at low temperatures. Electrical characteristics of MIS devices were measured to determine the interface parameters. From C-V-f and G-V-f measurements, density of interface states has been obtained as (4–6)×1011 cm−2 eV−1 at the semiconductor mid-gap. Some inversion charge buildup was seen in the C-V plot although the strong inversion regime is absent. Thermally stimulated current measurements indicate a trap density of 5×1018−1019 cm−3 in the dielectric film, with their energy level at 0.59 eV.