High-performance p-channel poly-Si TFT's using electron cyclotronresonance hydrogen plasma passivation |
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| Authors: | Aiguo Yin Fonash SJ |
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| Affiliation: | Lab. of Electron. Mater. & Process. Res., Pennsylvania State Univ., University Park, PA; |
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| Abstract: | This letter presents a summary of the first detailed investigation of electron cyclotron resonance (ECR) hydrogen plasma exposure treatments of p-channel poly-Si thin film transistors (TFT's). It is shown that ECR hydrogenation can be much more efficient than RF hydrogenation. Poly-Si p-channel TFT's fabricated at low temperatures (⩽625°C) and passivated with the ECR hydrogenation treatment are shown to exhibit ON/OFF current ratios of 7.6×107, subthreshold swings of 0.62 V/decade, threshold voltages of -4.6 V, and hole mobilities over 18 cm2/V.s |
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