High performance pseudomorphic InGaP/InGaAs power HEMTs |
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Authors: | F Ren J R Lothian H S Tsai J M Kuo J Lin J S Weiner R W Ryan A Tate and Y K Chen |
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Affiliation: | Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, NJ 07974, U.S.A. |
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Abstract: | Power transistors with a low d.c. supply voltage were demonstrated with pseudomorphic InGaP/In0.2Ga0.8As/GaAs heterostructure field effect transistors on GaAs substrates and 1 μm gate length technology. A current density of 200 mA mm?1 and an extrinsic transconductance of 300 mS mm?1 were exhibited on a 400 μm gate width process control monitor device. For a 1 cm gate width device measured at 850 MHz and Vds = 1.3 V, state-of-the-art results, 57.4% for the PAE, 12.7 dB for the linear gain and 21.5 dBm for the output power, were obtained. |
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