High performance pseudomorphic InGaP/InGaAs power HEMTs

Power transistors with a low d.c. supply voltage were demonstrated with pseudomorphic InGaP/In_0.2Ga_0.8As/GaAs heterostructure field effect transistors on GaAs substrates and 1 μm gate length technology. A current density of 200 mA mm⁻¹ and an extrinsic transconductance of 300 mS mm⁻¹ were exhibited on a 400 μm gate width process control monitor device. For a 1 cm gate width device measured at 850 MHz and V_ds = 1.3 V, state-of-the-art results, 57.4% for the PAE, 12.7 dB for the linear gain and 21.5 dBm for the output power, were obtained.