Electrical properties of phosphorus diffused GaAs |
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| Authors: | G C Jain D K Sadana B K Das |
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| Affiliation: | (1) Division of Materials, National Physical Laboratory, 110012 New Delhi, India;(2) Present address: Department of Metallurgy, University of Oxford, Parks Road, Oxford, UK |
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| Abstract: | The electrical parameters, i.e. mobility, resistivity and ionization energy, of the dopant (Se) have been determined at different depths in phosphorus diffused GaAs. These values have been compared with those obtained for the epitaxially grown specimens. |
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