| GaN肖特基核辐射探测器对X射线的响应时间特性研究 |
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| 引用本文： | 付凯,于国浩,陆敏. GaN肖特基核辐射探测器对X射线的响应时间特性研究[J]. 原子能科学技术, 2010, 44(Z1): 449-452. DOI: 10.7538/yzk.2010.44.suppl.0449 |
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| 作者姓名： | 付凯 于国浩 陆敏 |
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| 作者单位： | 1. ;中国科学院 ;苏州纳米技术与纳米仿生研究所，江苏 ;苏州 ;215123；2. ;中国科学院 ;研究生院，北京 ;100049 |
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| 基金项目： | 国家自然科学基金资助项目，江苏省自然科学基金资助项目，苏州市应用基础研究计划资助项目，国家重点基础研究发展计划资助项目 |
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| 摘 要： | 通过制作大面积GaN肖特基X射线探测器，研究了GaN肖特基探测器对X射线的时间响应特性。实验采用Fe掺杂的高阻自支撑GaN片来制备器件，对不同偏压下的时间响应进行了测试。针对所测得的实验结果，对其内部机理进行了分析，提出了1个GaN肖特基探测器对X射线照射下的时间响应的理论模型，得到非常好的拟合结果。实验发现，由于高阻层的存在，GaN肖特基探测器具有很高的信噪比，即使在可能的光淬灭效应的影响下，探测器在200V反向偏压下的信噪比仍可达到80左右。
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| 关 键 词： | GaN 肖特基探测器 X射线 响应时间 |
Time Response of GaN Schottky Detector for X-ray Detection |
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| FU Kai,YU Guo-hao,LU Min. Time Response of GaN Schottky Detector for X-ray Detection[J]. Atomic Energy Science and Technology, 2010, 44(Z1): 449-452. DOI: 10.7538/yzk.2010.44.suppl.0449 |
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| Authors: | FU Kai YU Guo-hao LU Min |
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| Affiliation: | 1. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science, Suzhou 215123, China; 2. Graduate University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | Time response of GaN Schottky detector with a large area to X-ray was studied. Using a Fe-doped GaN high resistive film to make the detector, the time response under different bias was tested. For the measured results, a theoretical model of time response of GaN Schottky detector to X-ray irradiation was proposed, and its internal mechanism was studied with a very good fitting results. It is found, due to the presence of high resistivity layer, the GaN Schottky detector can have a high signal to noise ratio of about 80 at reverse bias of 200 V, even in the possible effects of light quenching. |
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| Keywords: | GaN |
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