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Rectifying effect in boron nanowire devices |
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| Authors: | Dawei Wang Otten CJ Buhro WE Lu JG |
| Affiliation: | Dept. of Chem. Eng., Univ. of California, Irvine, CA, USA; |
| Abstract: | It has been found that Ni forms ohmic contacts and Ti forms Schottky-barrier contacts to boron nanowires (BNWs). Using two-step electron-beam lithography, Ni and Ti electrodes are subsequently attached onto the ends of a single BNW. As a result, a nanoscale rectifier is created using a BNW. |
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