Light room anodic etching of highly doped n-type 4H SiC in high concentration HF electrolytes: difference between C and Si crystalline faces |
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Authors: | Gael Gautier Frederic Cayrel Marie Capelle Jérome Billoué Xi Song Jean-Francois Michaud |
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Affiliation: | 1.GREMAN, UMR CNRS 7347, Université de Tours, 16 rue P. et M. Curie, Tours Cedex 2, 37071, France |
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Abstract: | In this paper, we study the electrochemical anodization of n-type heavily doped 4 H-SiC wafers in a HF-based electrolyte without any UV light assistance. We present, in particular, the differences observed between the etching of Si and C faces. In the case of the Si face, the resulting material is mesoporous (diameters in the range of 5 to 50 nm) with an increase of the ‘chevron shaped’ pore density with depth. In the case of the C face, a columnar morphology is observed, and the etch rate is twice greater than for the one for the Si face. We''ve also observed the evolution of the potential for a fixed applied current density. Finally, some wafer defects induced by polishing are clearly revealed at the sample surfaces even for very short etching times. |
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Keywords: | Porous silicon carbide Electrochemical etching Si face C face |
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