InP/InGaAs HBTs with n+-InP contacting layers grown byMOMBE using SiBr4 |
| |
| Authors: | Fresina MT Jackson SL Stillman GE |
| |
| Affiliation: | Microelectron. Lab., Illinois Univ., Urbana, IL ; |
| |
| Abstract: | InP/InGaAs heterojunction bipolar transistors (HBTs) with low resistance, nonalloyed TiPtAu contacts on n+-InP emitter and collector contacting layers have been demonstrated with excellent DC characteristics. A specific contact resistance of 5.42×10-8 Ω·cm2, which, to the best of our knowledge, is the lowest reported for TiPtAu on n-InP, has been measured on InP doped n=6.0×1019 cm-3 using SiBr4. This low contact resistance makes TiPtAu contacts on n-InP viable for InP/InGaAs HBTs |
| |
| Keywords: | |
|
|
