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均匀磁场聚焦部分屏蔽流电子注的一种设计方法
引用本文:袁光泉. 均匀磁场聚焦部分屏蔽流电子注的一种设计方法[J]. 电子与信息学报, 1983, 5(1): 32-37.
作者姓名:袁光泉
作者单位:中国科学院电子学研究所
摘    要:本文叙述了适用于轴对称强流电子光学系统各种磁结构的部分屏蔽流过渡区的设计方法。通过综合选取磁系统和电子枪参数,实现了磁系统与电子枪的最佳匹配,获得了屏蔽系数大于0.8,波动小于1%的电子注。

收稿时间:1981-08-05

A METHOD OF THE DESIGN OF ELECTRON BEAMS FROM PARTIALLY SHIELDED CATHODE WITH UNIFORM MAGNETIC FOCUSING FIELD
Yuan Guang-Quan. A METHOD OF THE DESIGN OF ELECTRON BEAMS FROM PARTIALLY SHIELDED CATHODE WITH UNIFORM MAGNETIC FOCUSING FIELD[J]. Journal of Electronics & Information Technology, 1983, 5(1): 32-37.
Authors:Yuan Guang-quan
Affiliation:Institute of Electronics; Academia Sinica
Abstract:This paper describes a method of the design of the transition region of the electron beams from partially shielded cathode. This method is applicable to magnetic focusing structures of the axisymmetric high-density electron beam. Through synthetical choice of the parameters of a magnetic system and an electron gun, a optimum matching between the magnetic and the electron gun is obtained. So good results are given: a shielding coefficient Kc is higher than 0.8, a ripple ratio of the electron beams is less than 0.01.
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