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某单晶硅辐照系统辐射防护评价
引用本文:谷振军,张一云,徐显启,张之华.某单晶硅辐照系统辐射防护评价[J].辐射防护通讯,2007,27(3):8-11.
作者姓名:谷振军  张一云  徐显启  张之华
作者单位:中国工程物理研究院核物理与化学研究所,绵阳,621900;四川大学物理科学与技术学院,成都,610064;四川大学物理科学与技术学院,成都,610064;中国工程物理研究院核物理与化学研究所,绵阳,621900
摘    要:单晶硅经反应堆中子场辐照后,具有了活化放射性,在单晶硅转运出反应堆及暂存过程中对操作人员构成外照射危害.本文根据某反应堆单晶硅辐照系统技术参数,计算了辐照后样品的活化活度,以及操作人员所在处的周围剂量当量水平,并提出了优化辐照工艺流程和操作的建议.

关 键 词:单晶硅辐照  活化活度  屏蔽  周围剂量当量
文章编号:1004-6356(2007)03-0008-04
修稿时间:2007-01-11

Radiation Protection Assessment of Silicon Irradiation System
Gu Zhenjun,Zhang Yiyun,Xu Xianqi,Zhang Zhihua.Radiation Protection Assessment of Silicon Irradiation System[J].Radiation Protection Bulletin,2007,27(3):8-11.
Authors:Gu Zhenjun  Zhang Yiyun  Xu Xianqi  Zhang Zhihua
Affiliation:1. China Academy of Engineering Physics, Mianyang, 621900; 2. College of Physical Science and Technology, Sichuan University, Chengdu, 610064
Abstract:After being irradiated by neutrons in reactor, single crystal silicon was activated in radioactivity and poses danger to workers in the process of being transferred from reactor for storage. According to technical parameters of a silicon irradiation system, the sample activity and surrounding dose level are calculated, with suggestions of how to optimize design and operation given as well.
Keywords:Single crystal silicon Activated Shield Surrounding dose
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