Influence of annealing temperatures and time on the photoluminescence properties of Si nanocrystals embedded in SiO2 |
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Authors: | X.D. Zhou F. Ren X.H. Xiao G.X. Cai C.Z. Jiang |
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Affiliation: | aDepartment of Physics and Center for Electron Microcopy, Wuhan University, Wuhan 430072, China;bKey Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072, China |
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Abstract: | We report on the effects of annealing conditions on the photoluminescence from Si nanocrystal composites fabricated by implantation of Si ions into a SiO2 matrix, followed by thermal treatment in a nitrogen atmosphere. The evolution of the photoluminescence under different annealing temperatures (900–1100 °C) and annealing time (0.5 up to 5 h) were systematically studied for the implanted samples. After annealing the spectra presented two photoluminescence bands: one centered at 610 nm and another around 800 nm. Combined with transmission electron microscopy, we conclude that the photoluminescence behavior of the two bands suggests different origins for their emissions. The 610 nm band has its origin related to matrix defects, while the 800 nm band can be explained by a model involving recombination via quantum confinement effects of excitons in the Si nanocrystals and the interfacial states recombination process confined in the interfacial region between nanocrystals and SiO2 matrix. |
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Keywords: | Si nanocrystals Photoluminescence Ion implantation Annealing |
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