使用化学方法常温合成金纳米晶并通过旋涂工艺将其组装的存储特性可调型非易失性存储器

3C行业的不断发展，催生了对高密度、持久保存、快速擦写、鲁棒可靠性的非易失性存储器(如flash)的持续需求，促使我们在科研上不断地深入研究新材料、新工艺。在本文中，我们首次采用了区别于传统CMOS工艺的两步工艺方法来制作金属纳米晶非易失性存储器。这种方法，由于将金纳米晶的化学合成和后续组装分离开来，所以能够独立地调节纳米晶的尺寸和组装密度,而且可以很好地避免一直困扰的金属扩散问题。最终的形貌表征和电学测量结果，证实存在一个最优化的纳米晶密度--在这个最优化条件下，我们的存储器件，既有持久的保存时间，又有较大的存储窗口。而组装密度的可调，同时可以满足我们对于大的存储窗口/较长保存时间某一方面的偏好。这些实验结果，都很好地证明了我们两步工艺方法的可行性。

Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

A novel two-step method is employed, for the first time, to fabricate nonvolatile memory devices that have metal nanocrystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concern for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method.