Strained-layer InGaAs(P) quantum well semiconductor lasers and semiconductor laser amplifiers |
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| Affiliation: | 1. University Service Center for Transmission Electron Microscopy (USTEM), Technische Universität Wien, Wiedner Hauptstraße 8–10, Wien 1040, Austria;2. Institute of Solid State Physics, Technische Universität Wien, Wiedner Hauptstraße 8–10, Wien 1040, Austria;3. Central European Institute of Technology (CEITEC), Brno University of Technology, Purkyňova 123, Brno 612 00, Czech Republic |
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| Abstract: | Progress in long-wavelength strained (compressive and tensile) InGaAs(P) quantum well semiconductor lasers and amplifiers for applications in optical fibre communication systems is reviewed. By the application of grown-in strain, device performance is considerably improved to such an extent that conventional bulk and unstrained quantum well active-layer devices are outperformed, while high reliability, similar to that of unstrained devices, is maintained. |
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