Large Tolerance of Lasing Properties to Impurity Defects in GaAs(Sb)-AlGaAs Core-Shell Nanowire Lasers |
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Authors: | Tobias Schreitmüller Hyowon W Jeong Hamidreza Esmaielpour Christopher E Mead Manfred Ramsteiner Paul Schmiedeke Andreas Thurn Akhil Ajay Sonja Matich Markus Döblinger Lincoln J Lauhon Jonathan J Finley Gregor Koblmüller |
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Affiliation: | 1. Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany;2. Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208 USA;3. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5–7, 10117 Berlin, Germany;4. Department of Chemistry, Ludwig-Maximilians-University Munich, Butenandtstrasse 5–13 (E), 81377 Munich, Germany |
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Abstract: | GaAs-AlGaAs based nanowire (NW) lasers hold great potential for on-chip photonic applications, where lasing metrics have steadily improved over the years by optimizing resonator design and surface passivation methods. The factor that will ultimately limit the performance will depend on material properties, such as native- or impurity-induced point defects and their impact on non-radiative recombination. Here, the role of impurity-induced point defects on the lasing performance of low-threshold GaAs(Sb)-AlGaAs NW-lasers is evaluated, particularly by exploring Si-dopants and their associated vacancy complexes. Si-induced point defects and their self-compensating nature are identified using correlated atom probe tomography, resonant Raman scattering, and photoluminescence experiments. Under pulsed optical excitation the lasing threshold is remarkably low (<10 µJ cm−2) and insensitive to impurity defects over a wide range of Si doping densities, while excess doping (Si]>1019 cm−3) imposes increased threshold at low temperature. These characteristics coincide with increased Shockley-Read-Hall recombination, reflected by shorter carrier lifetimes, and reduced internal quantum efficiencies (IQE) . Remarkably, despite the lower IQE the presence of self-compensating Si-vacancy defects provides an improved temperature stability in lasing threshold with higher characteristic temperature and room-temperature lasing. These findings highlight an overall large tolerance of lasing metrics to impurity defects in GaAs-AlGaAs based NW-lasers. |
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Keywords: | doping III-V semiconductor nanostructures impurity defects nanowire lasers optical pumping photoluminescence spectroscopy selective area growth on silicon |
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